Purpose: The unit is designed for deposition of metallisation layers by magnetron sputtering of target material.
Maximum diameter of processed plates, mm150
Number of simultaneously processed items at ?150 mm, pcs.3
Maximum residual pressure in the working chamber (with closed airlock), Pa9*10-5
Film thickness irregularity, %±5
Number of working positions of magnetron carousel, pcs.4
Plate heating temperature, ?C300
Number of magnetrons, pcs.6
Magnetron target diameter, mm100
Power supply capacity, kW3
Number of magnetron power supply sources, pcs.2
Minimum ion energy from ion cleaning source, eV600
Maximum ion energy from ion cleaning source, eV800
Rotational speed of two-stage planetary substrate holder, rpm30
Number of gas lines with gas flow regulators, pcs.2
Air pumping speed of cryogenic pump, l/s6500
Pumping speed of cryogenic pump for argon, l/s5400
Pumping speed...
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