High-Power Semiconductor Module 2M410G | NPP Iskra OJSC | 俄罗斯批发
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首页 / 电气与照明 / 电气元件 / High-Power Semiconductor Module 2M410G
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High-Power Semiconductor Module 2M410G

High-Power Semiconductor Module 2M410G — NPP Iskra OJSC

品牌: ISKRA
¥648 - ¥2,592 CNY
MOQ: 20 pieces

主要特点

Shutdown time: 800
Turn-on time: 400
Constant forward voltage of the diode: 2.5 V
Diode reverse recovery time: 800

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产品描述

Powerful silicon semiconductor modules in hybrid design on bipolar transistors with insulated gate and integrated anti-parallel BWDs, made on a single-key circuit (parallel key) in metal-ceramic cases with insulated flange; designed for use in power supply systems, converter equipment of secondary power supplies and electric drives, etc.

规格参数

Shutdown time
800
Turn-on time
400
Constant forward voltage of the diode
2.5 V
Diode reverse recovery time
800
Output capacity
5.0E-10
Input capacity
6.0E-9
Gate-emitter threshold voltage
2.5...6.5 V
Collector-emitter saturation voltage
2.8 V
Gate leakage current
5.0E-7 A
Collector-emitter reverse current
0.0015 A

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