The microwave transistor with 3.5 mm periphery of 18 W power is manufactured by PN05D technology of Svetlana-Rost JSC.
Main parameters:
Frequency range: 0 - 6 GHz;
Output power (P 3dB ): 18 W at 3 GHz;
Gain in linear mode: 14 dB;
Operating voltage: 28 - 45 V;
Overall dimensions: 1090 x 950 x 100 µm.
The transistor is supplied as a crystal.
The source is commutated through metallised through-holes to the backside metallisation.
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