Gallium Arsenide Semiconductor Plates with GA05-D-L-01 Components | Svetlana-Rost OJSC | Wholesale from Russia
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Gallium Arsenide Semiconductor Plates with GA05-D-L-01 Components

Gallium Arsenide Semiconductor Plates with GA05-D-L-01 Components — Svetlana-Rost OJSC

$3,000 - $18,000 USD
MOQ: 1 sheets

Key Features

type: пластина
designation: GaAs
Design rate: 0.0005 mm
Maximum plate diameter: 100 mm

Description

Functional groups of microwave products verified by manufacturing based on the GA05-D-L-01 library:
- SPDT switches - up to 20 GHz,
-controlled attenuators (single and multi-bit) up to 20 GHz,
-attenuators with fixed attenuation up to 20 GHz,
-phase shifters (single and multi-bit) up to 20 GHz,
-small noise amplifiers up to 8 GHz,
-control signal level converter,
-wideband amplifiers with distributed amplification (DAE) - up to 22 GHz,
-Buffer amplifiers of IF path and up to X-band inclusive,
-Hilbert cell based multipliers for the IF path,
-linear amplifiers up to 8 GHz,
-frequency mixers, including quadrature active modulators up to 15 GHz,
-power limiters up to 2 W,
-frequency multipliers by 2 and 3 - in the frequency range up to 18 GHz,
-bandpass filters, low-pass filters, high-pass filters,
-power dividers, directional taps, including Lange bridge,
as well as any combination of them as a part of SFU.

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