Epitaxial Structures Based on Gallium Arsenide for Microwave Integrated Circuits | Svetlana-Rost OJSC | Яклухт аз Русия
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Epitaxial Structures Based on Gallium Arsenide for Microwave Integrated Circuits

Epitaxial Structures Based on Gallium Arsenide for Microwave Integrated Circuits — Svetlana-Rost OJSC

сом. 3,270 - сом. 26,160 TJS
MOQ: 5 pieces

Хусусиятҳои асосӣ

Maximum plate diameter: 6 mm

Тавсиф

GaAs-based epitaxial structures grown by molecular beam epitaxy designed for the production of microwave monolithic integrated circuits (MICs) for radio electronic equipment for various purposes

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