Radiation-resistant chip 1657RU1U static synchronous CMOS SRAM (SRAM) with capacity of 4 Mbit with 512Kx8 organisation is intended for use in on-board equipment for various purposes.
MAIN FEATURES:
-fabrication technology: 250 nm CMOS;
-memory type: static, asynchronous;
-memory organisation: 512K×8;
-address sampling time:
? typical 25 ns;
? during and immediately after the WWF and radiation impact not more than 40 ns;
-type power consumption: 80 mW;
-power supply voltages: 2.5 V and 3.3 V;
-temperature range: from -60 to +125 °?;
-ceramic metal housing LCC-44, 16,5 x 16,5 mm;
-atmospheric low operating pressure: 10-6 mm Hg;
-microcircuit mass not more than 3,0 g;
-microcircuit is resistant to static electricity with a potential of at least 1000 V;
-case: LCC44, 16,5 x 16,5 mm, pin spacing 1,27 mm.
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