System diffusion single-zone multi-tube model SDOM-3/100 is designed for automatic gas-thermal treatment of silicon wafers with a diameter of 50 ... 100 mm by diffusion and oxidation in the flow of vapour-gas mixture in the chamber of an open (direct-flow) quartz reactor in the production of semiconductor electronics products at temperatures from 600 ° C to 1200 ° C (briefly up to 1300 ° C).
Internal diameter of the heating chamber, mm-160;
Internal diameter of the heating element not less than 180 mm;
The length of the working heat zone is not less than 600 mm;
Time of heating up the electric furnace to the maximum working temperature not more than - 2 hours;
Working medium gaseous: argon, oxygen, nitrogen, - humidified oxygen (humidified nitrogen);
- temperature distribution error along the length of the working zone, not more, °? - ±1.0.
Average service life is not less than 6 years.
Overall dimensions DxWxH, mm not more: 4000x1030x2850;
Weight, kg, not more than 2200.
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