Individual substrate processing in one process cycle:
Up to Ø 150 mm - 1 pc;
Measurement of RF displacement on RF electrode - substrate holder
in the range from 0 to 1000 V;
Regulation and automatic maintenance of power level
RF power level in the range from 30 to 200 W;
Regulation and automatic maintenance of power level
HF ICP plasma source in the range of 400 - 600 W;
Working gases: Ar, SF?, C?F?;
Oil-free pumping system;
Microprocessor control system;
Consumption power not more than 5.5 kW.
أخبرنا بما تحتاجه واحصل على عروض أسعار من موردين موثوقين