Товары — Чип памяти
Микросхема базовой ячейки памяти НРТШ.431214.003-01ТУ (GSN2517Y)
US$0.30-2.40
Power supply voltage:
2.5
Operating temperature:
85
АО "ДЖИЭС-НАНОТЕХ" 🇷🇺
Микросхема интегральная К1645РУ6У (К1645РУ6УК)
US$0.90-6
SOSU:
16000000
Power supply voltage:
3...3.6
АО "ПКК МИЛАНДР" 🇷🇺
1620РУ6УНИ Спецстойкая СОЗУ 2 Кбит с защитой от сбоев
US$3-18
Data:
512x4 digit capacity, 2.5 µm CMOS technology, Supply voltage from 4.5V to 7.5V, Read/write cycle, not less than 850 ns / 850 ns, Sampling time, not more than 300 ns, Current consumption in storage mode, not more than 8 mA, Dynamic current consumption, not
Type of product according to PP RF 616:
Integrated electronic circuits
ФГУП "РФЯЦ - ВНИИЭФ" 🇷🇺
1658РУ1У Спецстойкая СОЗУ 64 Кбит
US$6-60
Data:
8Kx8 digit capacity, CMOS technology, CED 0.35 µm, Supply voltage 3.3V ± 10%, Read/write cycle, not less than 60 ns / 80 ns, Sampling time, not more than 60 ns, Current consumption in storage mode, not more than 5 mA, Dynamic current consumption, not more
Type of product according to PP RF 616:
Integrated electronic circuits
ФГУП "РФЯЦ - ВНИИЭФ" 🇷🇺
Микросхема интегральная К1645РУ6У1 (К1645РУ6У1К)
US$3-18
SOSU:
16000000
Power supply voltage:
3...3.6
АО "ПКК МИЛАНДР" 🇷🇺
Микросхема базовой ячейки памяти РДВП.431214.011ТУ (микросхема GSN2516Y)
US$0.90-3.60
Operating temperature, degrees Celsius:
-40 to +85
Operating temperature, degrees Celsius:
-40 to +85
АО "ДЖИЭС-НАНОТЕХ" 🇷🇺
Микросхема интегральная К1645РУ61У1
US$3-18
Operating temperature range:
185
Case:
64-pin ceramic-metal housing
АО "ПКК МИЛАНДР" 🇷🇺
1665РУ1У Спецстойкая СОЗУ 1 Мбит
US$3-18
Data:
128Kx8 digit capacity, CMOS technology 0.24 µm CED, Supply voltage 3.3V ± 10%, Read/write cycle, not less than 35 ns / 50 ns, Sampling time, not more than 35 ns, Current consumption in storage mode, not more than 5 mA, Dynamic current consumption, not more
Type of product according to PP RF 616:
Integrated electronic circuits
ФГУП "РФЯЦ - ВНИИЭФ" 🇷🇺