Flash-type electrically reprogrammable ROM chip with 64 Mbit memory capacity (4M x 16 or 8M x 8), interfaces: Serial, Parallel, SPI (operating frequency up to 30 MHz), Supply voltage 3 to 3.6 V, Current consumption static 2 mA, dynamic up to 50 mA, storage time >10 years, number of rewrite cycles >10,000, ESD 2 kV, access time 50 ns, operating temperature -45 to +85 deg., QFN64
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