Purpose: The low-temperature plasma-stimulated atomic layer deposition unit is designed to form barrier and dielectric nanolayers, including high-k sub-gate ferroelectric and/or segmentoelectric dielectrics for operational non-volatile storage devices of FRAM (Ferroelectric Random Access Memory) type.
Technical parameters of the machine
Maximum diameter of plates to be processed, mm200
Loading/unloading of wafers from cassette to cassettePresent
Number of simultaneously processed products at ?200 mm, pcs.1
Maximum residual pressure in the working chamber (at closed airlock), Pa6*10-4
Working pressure in the chamber, Pa1 ÷ 200
Residual pressure in the distribution module, Pa8
Temperature of substrate holder, ?C25 ÷ 300
Number of gas lines with gas flow regulators, pcs.8
RF power supplied to the source of inductively coupled plasma (ICP), W0 ÷ 600
Frequency of RF signals supplied to the source of inductively coupled plasma (ICP), MHz13...
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