High-Performance GM358S8RG Integrated Circuit | MICRON OJSC | Rossiyadan ulgurji savdo
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Bosh sahifa / IT va telekommunikatsiyalar / Sanoat IT va avtomatika / Sanoat aloqa modullari / High-Performance GM358S8RG Integrated Circuit
Bosh sahifa IT va telekommunikatsiyalar Sanoat IT va avtomatika Sanoat aloqa modullari
High-Performance GM358S8RG Integrated Circuit

High-Performance GM358S8RG Integrated Circuit — MICRON OJSC

Brend: Micron
so'm 1,512 - so'm 7,560 UZS
MOQ: 10000 pieces

Asosiy xususiyatlar

Power supply voltage: 3...40 V
Operating temperature range: -40...85 °C
Housing type: SO-8
Consumption current, mA: 2

Yana shu brenddan Micron

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Tavsif

The GM358S8RG is fabricated from a 358M4K crystal and consists of two independent, high-gain, internally frequency-compensated operational amplifiers that have been specifically designed to function from a single power supply over a wide voltage range. Operation from a split power supply is also possible.

A distinctive feature of the device is its low power consumption, input in-phase voltage range up to GND/VEE.

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