Products — Electrical Components
P-N-P Silicon Transistor KT234V9
US$0.03-0.24
Boundary voltage:
Not less than 45 V
Maximum permissible DC collector-to-base voltage:
Not more than 50 V
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Compact N-Channel Field Transistor 2P526A9
US$0.06-0.36
Maximum power dissipation:
0.625
Operating temperature:
-60 to +125
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Compact NPN Bipolar Transistor KT665A9 for Surface Mount
US$0.03-0.24
Ik max:
1
Uke max:
100
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Field-effect P-Channel Transistor 2P527A9
US$0.06-0.60
Maximum power dissipation:
0.625
Threshold voltage:
-3.5
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Schottky Diode Assembly 2DSh160AC9
US$0.09-0.36
Operating temperature range:
-60 to +125
Maximum permissible permanent power dissipation:
0.23
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Schottky Diode Assembly 2DSh160BS9
US$0.06-0.60
Maximum permissible direct direct current:
0.2
Constant forward voltage:
0.8
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High-Stability Voltage Reference Source K5354EC014
US$0.30-2.40
Reference voltage:
Not less than 1.228 V and not more than 1.252 V
Operating temperature:
-60 to +125
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Parallel Voltage Reference Source K5354EC034
US$0.90-3.60
Reference voltage:
Not less than 2.476 and not more than 2.514
Operating temperature:
-60 to +125
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Dual Channel Gate Driver IC for Efficient Control - 5341EU014
US$0.30-2.40
Operating temperature:
-60 to +125
High level input voltage at the pins:
Not less than 2.7V
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Fixed Parallel Voltage Reference IC K5355EC01T4
US$0.90-3.60
Voltage between cathode and anode:
Not less than 9,900 and not more than 10,100 V
Cathode current:
Not less than 0.1 mA and not more than 15 mA
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Fixed Parallel Type Voltage Reference Chip K5355EC01B4
US$0.30-1.80
Voltage between cathode and anode:
Not less than 1,218 V and not more than 1,242 V
Cathode current:
Not less than 0.1 mA and not more than 15 mA
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